Temperature-Induced Lifshitz Transition in WTe2.
نویسندگان
چکیده
We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X-Γ-X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T≃160 K, associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ(T) due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T≈175 K and a breakdown of Kohler's rule in the 70-140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals.
منابع مشابه
A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few - layer Td - WTe 2 Manoj
The recent discovery of non-saturating giant positive magnetoresistance in Td-WTe2 has aroused great interest in this material. We have studied the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2 experimentally and theoretically. Spin-orbit coupling is found to govern the semi-metallic character of Td-WTe2. Its structural link with the metallic 1T form provides a...
متن کاملSuperconductivity in Weyl semimetal candidate MoTe2.
Transition metal dichalcogenides have attracted research interest over the last few decades due to their interesting structural chemistry, unusual electronic properties, rich intercalation chemistry and wide spectrum of potential applications. Despite the fact that the majority of related research focuses on semiconducting transition-metal dichalcogenides (for example, MoS2), recently discovere...
متن کاملRaman fingerprint for semi-metal WTe2 evolving from bulk to monolayer
Tungsten ditelluride (WTe2), a layered transition-metal dichalcogenide (TMD), has recently demonstrated an extremely large magnetoresistance effect, which is unique among TMDs. This fascinating feature seems to be correlated with its special electronic structure. Here, we report the observation of 6 Raman peaks corresponding to the A2(4), A1(9), A1(8), A1(5), and A1(2) phonons, from the 33 Rama...
متن کاملElectronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5
The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is poss...
متن کاملThermal composition fluctuations near the isotropic Lifshitz critical point in a ternary mixture of a homopolymer blend and diblock copolymer
We have studied thermal composition fluctuations of a ternary symmetric homopolymer/diblock copolymer system of PEE/PDMS/PEE-PDMS @PEE and PDMS being poly~ethyl ethylene! and poly~dimethyl siloxane!, respectively# in its disordered state with small angle neutron scattering for concentration F of diblocks up to 15%. The phase diagram shows three characteristic regimes; ~1! below the Lifshitz con...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 115 16 شماره
صفحات -
تاریخ انتشار 2015